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Piezo-optical effects in GaAs with interspersed (211)-InAs lattice planes

1992; American Physical Society; Volume: 45; Issue: 15 Linguagem: Inglês

10.1103/physrevb.45.8825

1095-3795

Matthias Ilg, O. Brandt, A. Ruiz, K. Ploog,

Advanced Semiconductor Detectors and Materials

We study piezoelectric field effects in the ultimate atomic limit. The insertion of piezoelectrically active (211)-InAs lattice planes in GaAs gives rise to optical phenomena not observed in analogous (100) structures. The InAs-related luminescence exhibits a pronounced blue shift with increasing excitation density. The nonlinear dependence of the corresponding luminescence efficiency is a manifestation of the internal piezoelectric field in the strained InAs sheets.