Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETs
2007; Institution of Engineering and Technology; Volume: 43; Issue: 7 Linguagem: Inglês
10.1049/el
ISSN1350-911X
AutoresWilliam Stillman, M. S. Shur, Dmitry Veksler, Sergey Rumyantsev, F Guarin,
Tópico(s)Superconducting and THz Device Technology
ResumoResults of room temperature measurement of nonresonant sub-terahertz detection by nanoscale silicon MOSFETs under a variety of load conditions are reported. The effect of device loading is incorporated into existing response models to explain diminished response in the sub-threshold region, and calculation of noise equivalent power indicates minima near the threshold voltage.
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