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Two components of tunneling current in metal‐oxide‐semiconductor structures

1983; American Institute of Physics; Volume: 43; Issue: 1 Linguagem: Inglês

10.1063/1.94145

1520-8842

B. Eitan, Avinoam Kolodny,

Silicon Nanostructures and Photoluminescence

Two distinct components of tunneling current in silicon metal-oxide-semiconductor structures are identified. In addition to the electron tunneling from the conduction band of the semiconductor, there is a second component interpreted as electron tunneling from the valence band. This is manifested as hole current in the silicon substrate. The ratio of valence-band to conduction-band tunneling currents is about 10−3, and increases slightly with the oxide field. This ratio is independent of oxide thickness, temperature, and gate-electrode material.