Barrier heights to silicon, of ruthenium and its silicide
1982; American Institute of Physics; Volume: 53; Issue: 7 Linguagem: Inglês
10.1063/1.329889
ISSN1520-8850
AutoresD. Donoval, Lars Stolt, H. Norde, Jorge de Sousa Pires, P.A. Tove, C. S. Petersson,
Tópico(s)Semiconductor materials and devices
ResumoThe Schottky barrier height between as-deposited, as well as heat-treated samples of Ru metal deposited onto n-type silicon was determined, using forward IV data and photoelectric response measurements. When no silicide formation was observed (using Rutherford backscattering analysis) a barrier height of φBo = 0.79±0.01 eV was found. Where heat treatment resulted in formation of RuSi1.5 (reported to be semiconducting), the barrier height varied in the range 0.70– 0.74 eV. We included recent barrier-height data for the other 4d-series elements with our results and found a trend of increase of barrier height with work function, similar to that found for the 5d series.
Referência(s)