Real time i n s i t u observation of the film growth of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy
1990; American Institute of Physics; Volume: 56; Issue: 16 Linguagem: Inglês
10.1063/1.103168
ISSN1520-8842
AutoresYasutake Toyoshima, Kazuo Arai, Akihisa Matsuda, Kazunobu Tanaka,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoThe growth of hydrogenated amorphous silicon films on Al substrates in a flow reactor was studied using infrared reflection absorption spectroscopy. All three hydride species (SiHx , x=1–3) in the growing films were detected as stretching and bending absorption bands in P polarization spectra. The dominant absorption band, initially originating from higher hydrides, was shifted to lower wave numbers with an increase of film thickness. A steep rise in absorption intensity at the initial stage and a time delay in SiH emergence are discussed in terms of the enhancement of detection sensitivity in a hydrogen-rich layer and the time needed for the formation of a bulk-network structure, respectively.
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