Simulation of deep depleted SOI MOSFET's with back potential control
1985; Elsevier BV; Volume: 129; Issue: 1-3 Linguagem: Inglês
10.1016/0378-4363(85)90589-3
ISSN1873-2127
AutoresF. Balestra, J. Brini, Paulo Gentil,
Tópico(s)Silicon Carbide Semiconductor Technologies
ResumoWe consider SOI MOSFET structures of N and P types for which a control of the back potential of the epi layer is obtained by using a back gate. The action of the interface parameters on the back and front threshold voltages is analysed in the case of a strong coupling between the front and back interface (lightly doped epi layer). This analysis is carried out by a numerical simulation of Poisson's equation throughout the structure. We thus obtain the potential profile and the electron and hole densities, as a function of front (Vg1) and back (Vg2) gate voltages. We also deduce the ld(Vg1, Vg2) characteristics in the case of low drain voltage. Experimental material is given by CMOS/SOS transistors, the sapphire substrate of which has been locally thinned down. Comparison of the experimental ld(Vg2) characteristics with the simulated characteristics allows us to determine directly the fast state density and the fixed charge at the back interface.
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