Portal de Periódicos da CAPES

Vertically aligned ZnO nanodisks and their uses in bulk heterojunction solar cells

2010; American Institute of Physics; Volume: 2; Issue: 5 Linguagem: Inglês

10.1063/1.3478880

1941-7012

Congkang Xu, Kaikun Yang, Liwei Huang, Howard Wang,

ZnO doping and properties

A new approach has been developed for fabricating vertically aligned ZnO nanodisks (ZONDs) on indium tin oxide coated glass for photovoltaic devices. ZONDs with a thickness of ∼40 nm and diameter from ∼150 nm to 2 μm have been synthesized via chemical vapor deposition at low temperatures of ∼320 °C. As-synthesized nanodisks are single crystalline and have broad photoluminescence emission. ZOND arrays have been used to construct bulk heterojunction photovoltaic devices together with neat poly(3-hexylethiophene) (P3HT) or (6,6)-phenyl C61 butyric acid methyl ester (PCBM) and P3HT blends, respectively. The P3HT/ZOND hybrid solar cell has a power conversion efficiency of up to 0.212%, a fill factor of 0.36, and an open circuit voltage of 341 mV, whereas the P3HT:PCBM/ZOND solar cell has a power conversion efficiency of 1.21%, a fill factor of 0.46, and a open circuit voltage of 445 mV.