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Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å

1998; American Institute of Physics; Volume: 84; Issue: 5 Linguagem: Inglês

10.1063/1.368403

1520-8850

S.G. Sridhara, Robert P. Devaty, W. J. Choyke,

Semiconductor materials and interfaces

We report the values of the absorption coefficient of 4H SiC at room temperature, in the wavelength range from 3900 to 3350 Å and at 3250 Å. By using the known shift in the band gap with temperature, we also present an estimate of the absorption coefficient of 4H SiC at 2 K.