Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric
2009; American Institute of Physics; Volume: 94; Issue: 12 Linguagem: Inglês
10.1063/1.3106629
ISSN1520-8842
AutoresArun Suresh, Steven Novak, Patrick Wellenius, Veena Misra, John F. Muth,
Tópico(s)Advanced Memory and Neural Computing
ResumoA transparent memory device has been developed based on an indium gallium zinc oxide thin film transistor by incorporating platinum nanoparticles in the gate dielectric stack as the charge storage medium. The transfer characteristics of the device show a large clockwise hysteresis due to electron trapping and are attributed to the platinum nanoparticles. Effect of the gate bias stress (program voltage) magnitude, duration, and polarity on the memory window characteristics has been studied. Charge retention measurements were carried out and a loss of less than 25% of the trapped elec-trons was observed over 104 s indicating promising application as nonvolatile memory.
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