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Temperature dependence of intrinsic carrier concentration and density of states effective mass of heavy holes in InSb

1988; Elsevier BV; Volume: 49; Issue: 10 Linguagem: Inglês

10.1016/0022-3697(88)90173-4

1879-2553

Maciej Oszwałldowski, M. Zimpel,

Semiconductor materials and interfaces

From Hall measurements the temperature dependence of the intrinsic carrier concentration ni in InSb is determined between 200 K and the melting point of the compound (798 K). An empirical formula describing the temperature variation of ni is proposed. From the formula the temperature dependence of the density of states effective mass of heavy holes md in InSb is determined. The effective mass increases from the minimum value of 0.37me at 225 K to a maximum value of 0.45me at 650 K. The obtained temperature variation of md is smaller than found in earlier publications. The value of md and its temperature dependence are also determined independently from the values of the valence band parameters and their temperature dependences. md = 0.400 me decreasing with temperature at the rate of about 10−5deg−1 is obtained by this method. The discrepency of the results obtained by both methods is discussed and it is shown that the md determined from the valence band parameters is more reliable. A by-product of the work is the determination of the valence band parameters which are: F = −97.8, H = −4.72 and G = −1.30.