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Exciton radiative lifetime controlled by the lateral confinement energy in a single quantum dot

2005; American Physical Society; Volume: 71; Issue: 16 Linguagem: Inglês

10.1103/physrevb.71.161306

1550-235X

J. Hours, P. Senellart, Emmanuelle Peter, A. Cavanna, J. Bloch,

GaN-based semiconductor devices and materials

We report on time-resolved measurements on single GaAs quantum dots formed at the interface fluctuation of a $\mathrm{Ga}\mathrm{As}∕\mathrm{Al}\mathrm{Ga}\mathrm{As}$ quantum well. We measure exciton radiative lifetimes as short as $100\phantom{\rule{0.3em}{0ex}}\mathrm{ps}$, demonstrating that monolayer fluctuation quantum dots have larger oscillator strength than any other $\mathit{III}\text{\ensuremath{-}}\mathit{V}$ or $\mathit{II}\text{\ensuremath{-}}\mathit{VI}$ semiconductor quantum dots. Studying various single quantum dots, we demonstrate that the oscillator strength of a quantum dot is controlled by its lateral confinement energy.