Maximizing electrical activation of ion-implanted Si in In0.53Ga0.47As
2013; American Institute of Physics; Volume: 103; Issue: 23 Linguagem: Inglês
10.1063/1.4835097
ISSN1520-8842
AutoresAaron G. Lind, Nicholas G. Rudawski, Nicholas J. Vito, Christopher Hatem, M. C. Ridgway, Robert Hengstebeck, Bradley R. Yates, K. S. Jones,
Tópico(s)Semiconductor materials and devices
ResumoA relationship between the electrical activation of Si in ion-implanted In0.53Ga0.47As and material microstructure after ion implantation is demonstrated. By altering specimen temperature during ion implantation to control material microstructure, it is advanced that increasing sub-amorphizing damage (point defects) from Si+ implantation results in enhanced electrical activation of Si in In0.53Ga0.47As by providing a greater number of possible sites for substitutional incorporation of Si into the crystal lattice upon subsequent annealing.
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