Artigo Acesso aberto Revisado por pares

Maximizing electrical activation of ion-implanted Si in In0.53Ga0.47As

2013; American Institute of Physics; Volume: 103; Issue: 23 Linguagem: Inglês

10.1063/1.4835097

ISSN

1520-8842

Autores

Aaron G. Lind, Nicholas G. Rudawski, Nicholas J. Vito, Christopher Hatem, M. C. Ridgway, Robert Hengstebeck, Bradley R. Yates, K. S. Jones,

Tópico(s)

Semiconductor materials and devices

Resumo

A relationship between the electrical activation of Si in ion-implanted In0.53Ga0.47As and material microstructure after ion implantation is demonstrated. By altering specimen temperature during ion implantation to control material microstructure, it is advanced that increasing sub-amorphizing damage (point defects) from Si+ implantation results in enhanced electrical activation of Si in In0.53Ga0.47As by providing a greater number of possible sites for substitutional incorporation of Si into the crystal lattice upon subsequent annealing.

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