Stacking Faults in TiC
1966; Wiley; Volume: 15; Issue: 1 Linguagem: Inglês
10.1002/pssb.19660150141
ISSN1521-3951
Autores Tópico(s)Aluminum Alloys Composites Properties
ResumoAbstract TiC single crystals doped by diffusion with 100 ppm of boron have been examined by transmission electron microscopy. Stacking faults, approximately 1 μm wide, bounded by partial dislocations were observed in all doped samples. It is considered that the faults serve as nucleation sites for the “Mondrian precipitates” observed by Williams [1].
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