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Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3- mu m gate length quantum-well HEMT's

1993; Institute of Electrical and Electronics Engineers; Volume: 28; Issue: 7 Linguagem: Inglês

10.1109/4.222183

ISSN

1558-173X

Autores

Z.-G. Wang, Manfred Berroth, U. Nowotny, M. Ludwig, P. Hofmann, A. Hülsmann, K. Köhler, B. Raynor, J. Schneider,

Tópico(s)

Photonic and Optical Devices

Resumo

An integrated laser-diode voltage driver (LDVD) making use of enhancement/depletion AlGaAs-GaAs quantum-well high electron mobility transistors (QW HEMTs) with gate lengths of 0.3 mu m has been developed. Its large signal bandwidth is 12 GHz. Eye diagrams of the output signal at bit rates up to 8 Gb/s show an opening similar to that of the input signal. Supporting material is given indicating that the LDVD might operate at bit rates up to 20 Gb/s. The maximum output current is over 90 mA; the maximum modulation voltage of 800 mV corresponds to 40-mA modulation current for a laser diode with 20- Omega dynamic resistance. The power consumption is less than 500 mW. >

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