Fabrication and characterization of short period AlN/GaN quantum cascade laser structures
2004; Elsevier BV; Volume: 265; Issue: 1-2 Linguagem: Inglês
10.1016/j.jcrysgro.2004.01.044
ISSN1873-5002
AutoresY. Inoue, Hitoya Nagasawa, Naoki Sone, Kenei Ishino, Akihiro Ishida, H. Fujiyasu, J.J. Kim, Hisao Makino, T. Yao, Shigeki SAKAKIBARA, Masakazu Kuwabara,
Tópico(s)Optical properties and cooling technologies in crystalline materials
ResumoShort period AlN/GaN quantum cascade (QC) laser structures that utilize a polarization field for electron injection were fabricated by hot wall epitaxy. A (GaN)n/(AlN)1 short period superlattice with several molecular layers of AlN was designed in order to realize a mid-infrared laser. The QC structures were analyzed by X-ray diffraction (XRD) measurements, atomic force microscopy and cross-sectional transmission electron microscopy observation. The XRD patterns and cross-sectional TEM images showed that a well-controlled quantum cascade structure could be prepared by hot wall epitaxy without inter-diffusion of the layers.
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