Using ion implantation to dope diamond — an update on selected issues
2001; Elsevier BV; Volume: 10; Issue: 9-10 Linguagem: Inglês
10.1016/s0925-9635(01)00427-7
ISSN1879-0062
Autores Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
ResumoSelected issues, relating to ion-beam doping of diamond are reviewed. Emphasis is placed on the different interpretations and postulates that have emanated from the Technion group and my own research efforts in South Africa. It is hoped that this analysis will lead to new insights and experiments. Recent experiments, especially those that relate to n-type doping and efforts to minimise the residual damage in diamond layers that have been doped by means of ion implantation, are also discussed.
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