Larmor beats and conduction electron g factors in In x Ga 1 − x A <mml:mi …
1999; American Physical Society; Volume: 60; Issue: 11 Linguagem: Inglês
10.1103/physrevb.60.7728
ISSN1095-3795
AutoresA. Malinowski, D. J. Guerrier, Nicholas Traynor, R. T. Harley,
Tópico(s)Semiconductor materials and devices
ResumoWe report conduction electron g factors ${g}_{e}$ in strained layer ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{A}\mathrm{s}/\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}$ quantum wells from time-resolved Larmor beats in reflection and cw Hanle luminescence depolarization. Samples had well widths from 3 to 20 nm and $x=0.11\ifmmode\pm\else\textpm\fi{}0.02.$ The beat frequency gave $|{g}_{e}|$ and nuclear Overhauser shift in the Hanle effect revealed its negative sign. The variation of ${g}_{e}$ with well width parallels that in ${\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}/\mathrm{A}\mathrm{l}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ wells, indicating the dominance of nonparabolicity of the bulk conduction band sampled at different electron confinement energies, with important, but weaker, expected effects of strain, quantum-well anisotropy, and barrier penetration.
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