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Electrical resistivity of highly crystallized kish graphite

1992; Elsevier BV; Volume: 30; Issue: 3 Linguagem: Inglês

10.1016/0008-6223(92)90047-z

1873-3891

Yoshihiro Hishiyama, Yutaka Kaburagi,

Graphite, nuclear technology, radiation studies

We obtained large and highly crystallized kish graphite flakes and measured the temperature dependence of the in-plane electrical resistivity for the specimens with the ρ300kρ4.2k values of 56 and 106 at temperatures between 1.28 and 300 K. The temperature-dependent component of the resistivity ρT was examined precisely, particularly at low temperatures. Below about 5 K, ρT is proportional to T2, then increases faster to nearly T3 (ρT ∝ T2.7) to about 15 K with increasing T. This is the intrinsic behavior of ρT for graphite crystal because of high crystallinity of the present specimens. The T2.7 dependence in the temperature range 5 ~ 15 K is due to the scattering of carriers by the out-of-plane phonons, whereas the T2 dependence at temperatures below about 5 K is attributed to the electronhole scattering as described by Morelli and Uher.