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High-speed >90% quantum-efficiency p–i–n photodiodes with a resonance wavelength adjustable in the 795–835 nm range

1999; American Institute of Physics; Volume: 74; Issue: 8 Linguagem: Inglês

10.1063/1.123485

1520-8842

Ekmel Özbay, Ïbrahim Kimukin, Necmi Bıyıklı, O. Aytür, Mutlu Gökkavas, Gökhan Ulu, M. Selim Ünlü, Richard P. Mirin, Kris A. Bertness, David H. Christensen,

Semiconductor Lasers and Optical Devices

We report GaAs/AlGaAs-based high-speed, high-efficiency, resonant cavity enhanced p–i–n photodiodes. The devices were fabricated by using a microwave-compatible fabrication process. By using a postprocess recess etch, we tuned the resonance wavelength from 835 to 795 nm while keeping the peak efficiencies above 90%. The maximum quantum efficiency was 92% at a resonance wavelength of 823 nm. The photodiode had an experimental setup-limited temporal response of 12 ps. When the system response is deconvolved, the 3 dB bandwidth corresponds to 50 GHz, which is in good agreement with our theoretical calculations.