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Temperature dependence of electron-ion recombination and ion mobilities in nitrogen afterglows

1965; Elsevier BV; Volume: 13; Issue: 7 Linguagem: Inglês

10.1016/0032-0633(65)90045-0

1873-5088

R. Hackam,

Advanced Chemical Physics Studies

A microwave cavity method has been used to measure the temperature dependence of electron density decay rates in nitrogen afterglows, over the range 295–694°K. At low gas pressures the afterglows, being diffusion controlled, yield the reduced ion mobility μ0 for the various gas temperatures. At 295°K, a value of (3.8 ± 0.1) cm2/Vsec was found for the ion mobility. The value of μ0 increases over the whole temperature range rising to (4.8 ± 0.1) cm2/Vsec at 694°K. Results at higher pressures (>10 mm Hg) indicate that the afterglows are recombination controlled. The measured values of the electron-ion recombination coefficient α yields a Tg−1.07 temperature dependence law. The coefficient at 295°K is 2.0 × 10−6 cm3/sec which is in good alphaeement with previous microwave cavity measurements. Для измepeHия тeмпepaтupHoй зaвиcимocти pacпaдa злeктpoHHoй плoт-Hocти в aзoтe пocлecвeCeHий, пo диaпaзoHu в 295 694°К, пpимeHялcя мeтoд микpo-вoлHoвoгo peзoHaтopa. Hpи Hизкич дaвлeHияч гaзa, peгuлиpueмыe pacceяHиeм пocлecвeCeHия, пpoизвoдят coкpaщeHHuю пoдвизиocть иoHoв для paзлиCHыч тeмпepaтup гaзa. Пpи 295°К, зHaCeHиe, oбHapuзeHHoe для пoдвизHocти иoHoв, выpaзaлocь в: (3.8 ± 0.1) cм2/V. ceк). зHCeHиe …? uвeлиCивaeтcя пo вceмu диaпaзoHu тeмпepaтup, пoвышaяcь дo (4.8 ± 8.1) cм2 (V. ceк), пpи 694°К. paзuль-тaты пpи бoлee cильHыч дaвлeHияч (> 10 ммHg) пoкaзывaaют, Cтo пocлecвeCeHия peгuлиpuютcя peкoмбиHaциями. йзмepяeмыe HaCeHия кoэффициeHтa α элeктpoH-Ho-иoHHoй peкoмбиHaции выявляют зaкoH тeмпepaтupHoй зaвиcимocти TK− 1.07. КoэффициeHт пpи 295°К cocтaвляeт 2.0 × 10−6 cм3ceк., Cтo впoлHe coглacueтcя c пpeдыдuщими измepeHиями микpoвoлHoвым peзoHaтopoм.