Hall effect and surface characterization of Cu2S and CuS films deposited by RF reactive sputtering
2001; Elsevier BV; Volume: 308-310; Linguagem: Inglês
10.1016/s0921-4526(01)00851-1
ISSN1873-2135
AutoresYunbin He, A. Polity, I. Österreicher, D. Pfisterer, R. Gregor, Bertrand Meyer, Martin Hardt,
Tópico(s)Quantum Dots Synthesis And Properties
ResumoAbstract Cu x S is one of the most prevalent minor phases co-existing in CuInS 2 films. In order to understand its influence on CuInS 2 , we first focus our study on the binary compound Cu x S. Cu 2 S, and CuS films were deposited on float glass substrates using a reactive RF sputter process with optimized sputter parameters, such as power, temperature of the substrate, and the gas flow of the H 2 S. X-ray diffraction spectra showed that the Cu 2 S films have (0 0 2) preferential orientation, and both compounds have a hexagonal structure. The surface morphology and the composition of the layers were analyzed by atomic force microscopy and Rutherford back-scattering spectroscopy, respectively. X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy were used to characterize the layer surfaces, as well as the surface composition. Hall-effect measurements were carried out to determine the electrical properties of the films.
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