Produção Nacional
Antiferromagnetism with spin polarization of GaN-based diluted magnetic semiconductors
2010; American Physical Society; Volume: 81; Issue: 11 Linguagem: Inglês
10.1103/physrevb.81.115209
ISSN1550-235X
AutoresJ. P. T. Santos, Marcelo Marques, L. K. Teles, Leonardo L. G. Ferreira,
Tópico(s)Magnetic and transport properties of perovskites and related materials
ResumoThe diluted magnetic semiconductors are promising materials for spintronic applications. Usually one intents to find the ferromagnetic state but recently the antiferromagnetism (AFM) was proposed to have some advantages. In this work, we verify the possibility to obtain spin polarization with an AFM state. In particular, we studied GaN 5% double doped with two different transition metals atoms (Mn and Co or Cr and Ni), forming the ${\text{Mn}}_{x}{\text{Co}}_{0.056\ensuremath{-}x}{\text{Ga}}_{0.944}\text{N}$ and ${\text{Cr}}_{x}{\text{Ni}}_{0.056\ensuremath{-}x}{\text{Ga}}_{0.944}\text{N}$ quaternary alloys. In order to simulate these systems in a more realistic way, and take into account composition fluctuations, we adapted the generalized quasichemical approach to diluted alloys, which is used in combination with spin density-functional theory. We find that is possible to obtain an AFM ground state up to 70% spin polarization.
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