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Defect Creation under UV Irradiation of CsI:Pb Crystals in Pb2+-Induced Absorption Bands Investigated by Luminescence Methods

2002; Wiley; Volume: 234; Issue: 2 Linguagem: Inglês

10.1002/1521-3951(200211)234

1521-3951

V. Babin, K. Kalder, А. Krasnikov, M. Nikl, K. Nitsch, S. Zazubovich,

Solid-state spectroscopy and crystallography

physica status solidi (b)Volume 234, Issue 2 p. 689-700 Original Paper Defect Creation under UV Irradiation of CsI:Pb Crystals in Pb2+-Induced Absorption Bands Investigated by Luminescence Methods V. Babin, V. Babin Institute of Physics, University of Tartu, Riia Street 142, 51014 Tartu, EstoniaSearch for more papers by this authorK. Kalder, K. Kalder Institute of Physics, University of Tartu, Riia Street 142, 51014 Tartu, EstoniaSearch for more papers by this authorA. Krasnikov, A. Krasnikov Institute of Physics, University of Tartu, Riia Street 142, 51014 Tartu, EstoniaSearch for more papers by this authorM. Nikl, M. Nikl Institute of Physics AS CR, Cukrovarnicka 10, 16253 Prague, Czech RepublicSearch for more papers by this authorK. Nitsch, K. Nitsch Institute of Physics AS CR, Cukrovarnicka 10, 16253 Prague, Czech RepublicSearch for more papers by this authorS. Zazubovich, S. Zazubovich [email protected] Institute of Physics, University of Tartu, Riia Street 142, 51014 Tartu, EstoniaSearch for more papers by this author V. Babin, V. Babin Institute of Physics, University of Tartu, Riia Street 142, 51014 Tartu, EstoniaSearch for more papers by this authorK. Kalder, K. Kalder Institute of Physics, University of Tartu, Riia Street 142, 51014 Tartu, EstoniaSearch for more papers by this authorA. Krasnikov, A. Krasnikov Institute of Physics, University of Tartu, Riia Street 142, 51014 Tartu, EstoniaSearch for more papers by this authorM. Nikl, M. Nikl Institute of Physics AS CR, Cukrovarnicka 10, 16253 Prague, Czech RepublicSearch for more papers by this authorK. Nitsch, K. Nitsch Institute of Physics AS CR, Cukrovarnicka 10, 16253 Prague, Czech RepublicSearch for more papers by this authorS. Zazubovich, S. Zazubovich [email protected] Institute of Physics, University of Tartu, Riia Street 142, 51014 Tartu, EstoniaSearch for more papers by this author First published: 06 November 2002 https://doi.org/10.1002/1521-3951(200211)234:2 3.0.CO;2-FCitations: 4AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Abstract The creation of defects in CsI:Pb crystals by ultraviolet radiation at 4.2 K has been investigated by thermally stimulated and optically stimulated luminescence methods. The origin of the optically created defects has been established. The dependences of the defect creation efficiency on the irradiation energy and time, on the uniaxial stress, and on the concentration of the impurity (Pb2+ and Na+) ions have been found. The charge-transfer processes taking place under irradiation of CsI:Pb crystals in the Pb2+-related absorption bands and resulting in the appearance of the self-trapped and localized exciton luminescence and in defect creation have been explained. References [1] V. Babin, A. Krasnikov, M. Nikl, K. Nitsch, A. Stolovich, and S. Zazubovich, J. Lumin., submitted. Google Scholar [2] S. Zazubovich, R. Aceves, M. Barboza Flores, P. Fabeni, T. Karner, G.P. Pazzi, R. Perez Salas, and N. Jaanson, J. Phys.: Condens. Matter 9, 7249 (1997). 10.1088/0953-8984/9/34/014 CASWeb of Science®Google Scholar [3] V. Babin, P. Fabeni, K. Kalder, M. Nikl, G.P. Pazzi, and S. Zazubovich, Radiat. 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