Photovoltaic Effect in Schottky Junction of Poly(3-alkylthiophene)/Al with Various Alkyl Chain Lengths and Regioregularities
2002; Institute of Physics; Volume: 41; Issue: Part 1, No. 2A Linguagem: Inglês
10.1143/jjap.41.675
ISSN1347-4065
AutoresKeiichi Kaneto, Kazuhisa Takayama, Wataru Takashima, Takeshi Endo, Masahiro Rikukawa,
Tópico(s)Thin-Film Transistor Technologies
ResumoPhotovoltaic effects of the Schottky junction cell consisting of indium tin oxide/poly(3-alkylthiophene) (PAT) films/Al have been studied as a function of alkyl chain length, regioregularity and film thickness. The photocurrents of the cell based on the excitation spectra with respect to their illumination sides were measured in order to elucidate the carrier generation mechanisms. It was found that the enhanced photocurrent is observed upon illumination of the Al side for shorter alkyl side chain lengths and highly regioregular PAT. The results have been discussed through a model in which the carrier generation occurs predominantly at the depletion layer of the Schottky junction with a typical thickness of approximately 60 nm.
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