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Improving the Charge Transport in Self-Assembled Monolayer Field-Effect Transistors: From Theory to Devices

2013; American Chemical Society; Volume: 135; Issue: 12 Linguagem: Inglês

10.1021/ja401320n

1943-2984

Christof M. Jäger, Thomas Schmaltz, Michael Novák, Artoem Khassanov, Alexeï Vorobiev, Matthias Hennemann, A. Krause, H. Dietrich, Dirk Zahn, Andreas Hirsch, Marcus Halik, Timothy Clark,

Advancements in Semiconductor Devices and Circuit Design

A three-pronged approach has been used to design rational improvements in self-assembled monolayer field-effect transistors: classical molecular dynamics (MD) simulations to investigate atomistic structure, large-scale quantum mechanical (QM) calculations for electronic properties, and device fabrication and characterization as the ultimate goal. The MD simulations reveal the effect of using two-component monolayers to achieve intact dielectric insulating layers and a well-defined semiconductor channel. The QM calculations identify improved conduction paths in the monolayers that consist of an optimum mixing ratio of the components. These results have been used both to confirm the predictions of the calculations and to optimize real devices. Monolayers were characterized with X-ray reflectivity measurements and by electronic characterization of complete devices.