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Effect of Strain in Epitaxially Grown SrRuO 3 Thin Films on Crystal Structure and Electric Properties

2002; Institute of Physics; Volume: 41; Issue: Part 1, No. 8 Linguagem: Inglês

10.1143/jjap.41.5376

1347-4065

Kenji Takahashi, Takahiro Oikawa, Keisuke Saito, Satoru Kaneko, Hironori Fujisawa, Masaru Shimizu, Hiroshi Funakubo,

Multiferroics and related materials

SrRuO3 thin films were epitaxially grown on (001)SrTiO3 and (001) [(LaAlO3)0.3–(SrAl0.5Ta0.5O3)0.7] (LSAT) substrates by rf magnetron sputter deposition and metalorganic chemical vapor deposition (MOCVD), and their crystal structure, electric property and thermal stability were investigated. SrRuO3 films prepared by MOCVD (MOCVD-SrRuO3 films) had almost the same volume of unit cell as that of the single crystal, while those prepared by rf magnetron sputter deposition (sputter-SrRuO3 films) had a larger volume. This large volume of the unit cell of sputter-SrRuO3 films decreased by the post annealing up to 830°C but did not reach that of the single crystal one. Temperature dependence of the resistivity of MOCVD-SrRuO3 films was in good agreement with that of the single crystal, which corresponds to metallic behavior, while that of sputter-SrRuO3 films showed semiconductor-like behavior below 120 K.