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Polariton lasing by exciton-electron scattering in semiconductor microcavities

2002; American Physical Society; Volume: 65; Issue: 15 Linguagem: Inglês

10.1103/physrevb.65.153310

1095-3795

Guillaume Malpuech, A. V. Kavokin, Aldo Di Carlo, Jeremy J. Baumberg,

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The relaxation bottleneck present in the dispersion relation of exciton polaritons in semiconductor microcavities has prevented the realization of low threshold lasing based on exciton-polariton condensation. Here we show theoretically that the introduction of a cold electron gas into such structures induces efficient electron-polariton scattering. This process allows the condensation of the polaritons accumulated at the bottleneck to the final emitting state with a transition time of a few picoseconds, opening the way to a new generation of low-threshold light-emitting devices.