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Photoelastic effect in piezoelectric semiconductor: ZnO

1976; American Institute of Physics; Volume: 47; Issue: 5 Linguagem: Inglês

10.1063/1.322933

1520-8850

H. Sasaki, K. Tsubouchi, Noriyoshi Chubachi, Nobuo Mikoshiba,

Ultrasonics and Acoustic Wave Propagation

The photoelastic tensor elements of the piezoelectric semiconductor ZnO were measured by the comparative acousto-optic diffraction method (reference material, fused quartz) at an acoustic frequency of 250 MHz and an optical wavelength of 0.633 μm. Two crystals with different conductivities, one is highly conductive and the other is highly resistive, were used as samples. The measured photoelastic tensor elements for piezoactive strains are different between these two samples. The difference is explained by the electro-optic contribution to the photoelasticity induced by the electric field accompanying the piezoactive acoustic wave in the highly resistive sample and its screening by free carriers in the highly conductive sample. The contribution of the rotation of the volume element to the photoelasticity has been also observed in photoelastic tensor elements for shear strains.