Portal de Periódicos da CAPES

Uniaxial stress study of the quantum transitions in a strained layer (001) In0.21Ga0.79As/GaAs single quantum well

1992; Elsevier BV; Volume: 267; Issue: 1-3 Linguagem: Inglês

10.1016/0039-6028(92)91099-w

1879-2758

Hao Qiang, Fred H. Pollak, C. Mailhiot, G. D. Pettit, J. M. Woodall,

Advancements in Semiconductor Devices and Circuit Design

We have studied the effects of large, external uniaxial stress (T) along [100] and [110] on the optical properties of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well (SQW). Because of the large stresses employed the observed energy shifts exhibit a nonlinear behavior due to the stress-induced coupling with the spin-orbit split band. For T ∥[110] the piezoelectric coupling produces an electric field along [001] which has a significant effect on both the energies and intensities of the various intersubband transitions.