In situ ion irradiation /implantation studies in the HVEM-tandem facility at argonne national laboratory
1989; Elsevier BV; Volume: 40-41; Linguagem: Inglês
10.1016/0168-583x(89)91044-6
ISSN1872-9584
AutoresC. W. Allen, L. Funk, E. A. Ryan, A. Taylor,
Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
ResumoThe HVEM-Tandem User Facility at Argonne National Laboratory interfaces two ion accelerators, a 2 MV tandem accelerator and a 650 kV ion implanter, to a 1.2 MV high-voltage electron microscope. This combination allows experiments involving simultaneous ion irradiation/ion implantation, electron irradiation and electron microscopy/electron diffraction to be performed. In addition the availability of a variety of microscope sample holders permits these as well as other types of in situ experiments to be performed at temperatures ranging from 10 to 1300 K, with the sample in a stressed state or with simultaneous determination of electrical resistivity of the specimen. This article summarizes the details of the Facility which are relevant to simultaneous ion beam material modification and electron microscopy, presents several current applications and briefly describes the straightforward mechanism for potential users to access this US Department of Energy-supported facility.
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