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Parameter determination from resistance-voltage curve for long-wavelength HgCdTe photodiode

2006; American Institute of Physics; Volume: 100; Issue: 8 Linguagem: Inglês

10.1063/1.2358411

1520-8850

Zhijue Quan, Z. F. Li, Weida Hu, Z. H. Ye, X. N. Hu, Wei Lü,

Chalcogenide Semiconductor Thin Films

A data-processing approach has been developed to obtain device parameters from resistance-voltage (R-V) curves measured on long-wavelength HgCdTe n-on-p photodiodes. The physical model used for R-V curve fitting includes the dark current mechanisms induced by diffusion, generation recombination, trap-assisted tunneling, and band-to-band tunneling. Moreover, the series resistance effect is also taken into account. Six parameters, which include the dopant density Nd in the n region, the ratio of mobility to lifetime of electrons μn∕τn in the p region, the effective lifetime τ0 in the depletion region, the relative energy position of trap level Et∕Eg and its density Nt in the depletion region, and the series resistance Rs, can be extracted from measured R-V curves. The fitting procedure has been presented in detail and the error ranges of the extracted parameters have been discussed. By fitting to the R-V characteristics of three long-wavelength devices with different Cd compositions, the applicability of our data-processing approach has been verified for obtaining those basic parameters.