Sputter deposited Pt–Ir oxides thin films and their characterization
2004; Elsevier BV; Volume: 109; Issue: 1-3 Linguagem: Inglês
10.1016/j.mseb.2003.10.037
ISSN1873-4944
AutoresKiyosi Kuribayashi, Yoshito Fujita, Hideyuki Isige, Takaya Iwanuma,
Tópico(s)Ferroelectric and Piezoelectric Materials
ResumoAbstract Pt–Ir and their oxides mixture thin films were prepared on Si(1 0 0) substrates at temperatures 500 and 600 °C by reactive rf magnetron sputtering with Pt–20 mass% Ir target and Ir chips set on the target. X-ray fluorescence analysis revealed that deposited films had a composition from Pt–20 mass% Ir to Pt–60 mass% Ir. Further Increase in Ir contents in the films resulted in a delamination of films from Si substrate. Deposition atmosphere was varied with O 2 /Ar flow ratio from 0 to 20%. Deposited films consisted of Pt–Ir alloy and their oxides such as PtO, PtO 2 and IrO 2 , which were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Electric resistivity of the films was measured to be from the order of 10 −4 to 10 −3 Ω cm by dc four probe method. In order to study performance of the films as electrode, SrTiO 3 as dielectrics and Pt as upper electrode were sputter deposited on Pt–Ir oxide/Si substrates in order. And current/voltage characteristics of SrTiO 3 were measured. Leakage current density of SrTiO 3 with 200 nm in thickness deposited on Pt–50 mass% Ir oxide electrodes and on Pt–50 mass% Ir alloy electrode were 1.7×10 −7 and 1.0×10 −6 A/cm 2 at 2.0 V of applied voltage, respectively. SrTiO 3 with100 nm in thickness, however, showed poor current/voltage characteristics.
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