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Ultra-high doping levels of GaAs with beryllium by molecular beam epitaxy

1985; Institution of Engineering and Technology; Volume: 21; Issue: 10 Linguagem: Inglês

10.1049/el

1350-911X

J.L. Lievin, F. Alexandre,

Molecular Junctions and Nanostructures

P-type doping levels up to 2×1020 at cm−3 in GaAs are presented using molecular beam epitaxy and beryllium as acceptor impurity. The epilayers present a perfect surface morphology and Be is not found to diffuse into the substrate, which permits the incorporation of such films into multilayer structures for device applications.