Landau-level pinning in wide modulation-doped quantum-well structures in the integer quantum Hall regime
1991; American Physical Society; Volume: 44; Issue: 7 Linguagem: Inglês
10.1103/physrevb.44.3436
ISSN1095-3795
AutoresD.G. Hayes, M. S. Skolnick, D. M. Whittaker, P.E. Simmonds, L. L. Taylor, S. J. Bass, L. Eaves,
Tópico(s)Semiconductor materials and devices
ResumoPinning effects between Landau levels in the two-dimensional electron gases on opposite sides of an asymmetric, wide quantum well in high magnetic field are reported. The process is driven by the renormalization of the potential when charge is transferred to maintain equilibrium between discrete-Landau-level densities of states. Self-consistent Hartree calculations successfully predict the pinning and many of the anomalous features observed in magnetoluminescence and magnetotransport.
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