Performance improvement of CdS quantum dots sensitized TiO 2 solar cells by introducing a dense TiO 2 blocking layer
2008; Institute of Physics; Volume: 41; Issue: 10 Linguagem: Inglês
10.1088/0022-3727/41/10/102002
ISSN1361-6463
AutoresYasuhiro Tachibana, Kazuya Umekita, Yasuhide Otsuka, Susumu Kuwabata,
Tópico(s)Advanced Photocatalysis Techniques
ResumoA dense TiO2 electron blocking layer was introduced on a conducting glass in CdS quantum dots sensitized solar cells to investigate electron leakage into the electrolyte. A ferricyanide/ferrocyanide redox couple was employed, as a model electrolyte, possessing a high standard rate constant. The analysis of the I–V characteristics, using a one-diode model, revealed that an increase in this layer, up to 50 nm, significantly suppresses the electron leakage, enhancing the shunt resistance by a factor of 200. An energy conversion efficiency of 1.0% was attained on account of the improved open circuit voltage and fill factor.
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