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Characterization of TlBr for X-ray and γ-ray detector applications

2009; Elsevier BV; Volume: 607; Issue: 1 Linguagem: Inglês

10.1016/j.nima.2009.03.125

1872-9576

Pasi Kostamo, M. Shorohov, V. Gostilo, Heikki Sipilä, V. Kozlov, I. S. Lisitsky, М. С. Кузнецов, A. Lankinen, A.N. Danilewsky, Harri Lipsanen, Markku Leskelä,

Semiconductor Quantum Structures and Devices

Crystal quality of radiation detector-grade TlBr material was analyzed by X-ray diffraction and synchrotron X-ray topography methods. The analyzed TlBr crystals were further processed for electrical characterization and current–voltage characteristics were measured at a temperature range of 210–320 K. The crystals studied in this work were grown by the Bridgman–Stockbarger process. X-ray diffraction measurements show the presence of small-angle grain boundaries in the crystals. The crystal with the most pronounced small-angle boundaries showed the lowest resistivity and the poorest spectroscopic characteristics.