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Surface photovoltaic effect in CdTe as influenced by recombination in the space‐charge region

2007; Wiley; Volume: 204; Issue: 7 Linguagem: Inglês

10.1002/pssa.200622462

1862-6319

J. Toušek, J. Toušková, E. Belas, L. Votoček,

Semiconductor Quantum Structures and Devices

Abstract Diffusion length of minority carriers in CdTe wafers was measured by the surface photovoltage (SPV) method. A model including recombination in the space‐charge region (SCR) is presented to explain the SPV spectra. Assuming a thick neutral bulk and an electric field only in the SCR, five parameters are needed for characterization of the system. On analyzing the problem we have found that the most important of them – the diffusion length of minority carriers L – is not influenced by recombination in the SCR. The results are verified on samples with different resistivities, and extracted diffusion length is compared with literature data. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)