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Hot-phonon lifetime in AlGaN/GaN at a high lattice temperature

2004; IOP Publishing; Volume: 19; Issue: 4 Linguagem: Inglês

10.1088/0268-1242/19/4/138

1361-6641

A. Matulionis, J. Liberis, L. Ardaravi ius, L.F. Eastman, J. R. Shealy, A. Vertiatchikh,

Radio Frequency Integrated Circuit Design

A microwave noise technique is applied to study hot phonons in a biased two-dimensional AlGaN/GaN channel. The longitudinal optical (LO)-phonon-conversion lifetime is estimated from the measured dependence of hot-electron temperature on supplied power. At a lattice temperature of 373 K, the mean value of the effective LO-phonon lifetime (350 fs) is close to the value obtained at room temperature.