Electrical Characteristics of Pt Schottky Contacts Fabricated on Amorphous Gallium Indium Zinc Oxides
2011; Institute of Physics; Volume: 50; Issue: 10R Linguagem: Inglês
10.1143/jjap.50.105702
ISSN1347-4065
AutoresHyunsoo Kim, Seongjun Kim, Kyoung‐Kook Kim, Sung‐Nam Lee, Kwang‐Soon Ahn,
Tópico(s)Silicon and Solar Cell Technologies
ResumoThe electrical characteristics of Pt Schottky diodes fabricated on amorphous gallium indium zinc oxide were investigated. On the basis of Schottky theory with the thermionic emission mode, an effective Schottky barrier height (SBH) of 0.55 eV and an ideality factor of 3.38 were obtained. The anomalously high ideality factor could be attributed to the statistical potential variations of conduction band edges, as evidenced from the distinctive carrier transport through percolation hopping conduction. In this respect, the barrier inhomogeneity model was applied to obtain reasonable Schottky parameters, yielding the mean barrier height of 1.23 eV with a large standard deviation of 192 mV.
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