Artigo Revisado por pares

Interface Engineering of Semiconductor/Dielectric Heterojunctions toward Functional Organic Thin-Film Transistors

2011; American Chemical Society; Volume: 11; Issue: 11 Linguagem: Inglês

10.1021/nl2028798

ISSN

1530-6992

Autores

Hongtao Zhang, Xuefeng Guo, Jingshu Hui, Shuxin Hu, Wei Xu, Daoben Zhu,

Tópico(s)

Photoreceptor and optogenetics research

Resumo

Interface modification is an effective and promising route for developing functional organic field-effect transistors (OFETs). In this context, however, researchers have not created a reliable method of functionalizing the interfaces existing in OFETs, although this has been crucial for the technological development of high-performance CMOS circuits. Here, we demonstrate a novel approach that enables us to reversibly photocontrol the carrier density at the interface by using photochromic spiropyran (SP) self-assembled monolayers (SAMs) sandwiched between active semiconductors and gate insulators. Reversible changes in dipole moment of SPs in SAMs triggered by lights with different wavelengths produce two distinct built-in electric fields on the OFET that can modulate the channel conductance and consequently threshold voltage values, thus leading to a low-cost noninvasive memory device. This concept of interface functionalization offers attractive new prospects for the development of organic electronic devices with tailored electronic and other properties.

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