Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser
1994; American Institute of Physics; Volume: 65; Issue: 2 Linguagem: Inglês
10.1063/1.112972
ISSN1520-8842
AutoresChi‐Wai Chow, Richard Schneider, James A. Lott, K.D. Choquette,
Tópico(s)Photonic and Optical Devices
ResumoThe wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.
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