A study of atomic layer deposited LiAlxOy films on Mg–Li alloys
2010; Elsevier BV; Volume: 518; Issue: 24 Linguagem: Inglês
10.1016/j.tsf.2010.05.033
ISSN1879-2731
AutoresP.C. Wang, Yu-Ting Shih, Meng‐Chang Lin, Hsin-Chih Lin, M. J. Chen, K.M. Lin,
Tópico(s)Semiconductor materials and devices
ResumoLiAlxOy films with thicknesses of 65–200 nm were deposited by the atomic layer deposition (ALD) technique on the LZ101 Mg–Li alloy. The ALD-deposited LiAlxOy films exhibit an amorphous structure and have an atomic ratios of Li:Al:O = 1:1:2. The potentio-dynamic polarization tests show that the corrosion resistance of Mg–Li alloys can be significantly improved due to the dense and pinhole-free structure as well as the excellent coverage and conformity of the ALD-deposited LiAlxOy films.
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