Electroreflectance of GaSb from 0.6 to 26 eV
1976; American Physical Society; Volume: 14; Issue: 10 Linguagem: Inglês
10.1103/physrevb.14.4450
ISSN0556-2805
AutoresD. E. Aspnes, C. G. Olson, D. W. Lynch,
Tópico(s)Chalcogenide Semiconductor Thin Films
ResumoSchottky barrier electroreflectance spectra are reported for GaSb from 0.6 to 26 eV. Accurate energies are determined for a number of critical points between the $s{p}^{3}$ and $\mathrm{Ga}\ensuremath{-}3d$ valence bands and the conduction bands. The energy of ${X}_{7}^{V}$ is shown to lie at least 3 eV below ${\ensuremath{\Gamma}}_{8}^{V}$. This is below the value obtained from local pseudopotential calculations and the x-ray photoemission assignments, but follows a trend previously established by nonlocal pseudopotential calculations for Ge and GaAs. The $\mathrm{Ga} 3d$-${X}_{6}^{C}$ exciton binding energy is of the order of 100 meV.
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