Portal de Periódicos da CAPES

Electron trap annealing in neutron transmutation doped silicon

1977; American Institute of Physics; Volume: 31; Issue: 9 Linguagem: Inglês

10.1063/1.89785

1520-8842

J. Guldberg,

Semiconductor materials and interfaces

Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these annealed in the manner characteristic of intrinsic defects studied by EPR and ir spectroscopy. Two may be related to residual oxygen and carbon complexes.