Gas source MEE growth of InGaAs/InP superlattices
1992; Elsevier BV; Volume: 60-61; Linguagem: Inglês
10.1016/0169-4332(92)90486-h
ISSN1873-5584
AutoresH. Asahi, Teruaki Kohara, R. K. Soni, Nobuyuki Takeyasu, Kumiko Asami, Shūichi Emura, Shun‐ichi Gonda,
Tópico(s)Quantum Dots Synthesis And Properties
ResumoAbstract InGaAs/InP heterostructures having atomically controlled interfaces are grown by gas source migration-enhanced epitaxy (GS MEE) on (001)InP substrates at 350°C. RHEED intensity oscillations persisted for over 1 h with the same amplitude and phase during the growth of InGaAs and InP for appropriate supply times of Group III and Group V atoms and proper supply interruption times. The RHEED intensity traces during the growth of InGaAs/InP superlattices as well as Raman spectra from InGaAs/InP quantum well structures suggest the formation of tailored InGaAs/InP heterointerfaces.
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