Direct Structural Mapping of Organic Field‐Effect Transistors Reveals Bottlenecks to Carrier Transport
2012; Volume: 24; Issue: 41 Linguagem: Inglês
10.1002/adma.201201856
ISSN1521-4095
AutoresRuipeng Li, Jeremy W. Ward, Detlef‐M. Smilgies, Marcia M. Payne, John E. Anthony, Oana D. Jurchescu, Aram Amassian,
Tópico(s)Thin-Film Transistor Technologies
ResumoAdvanced MaterialsVolume 24, Issue 41 p. 5553-5558 Communication Direct Structural Mapping of Organic Field-Effect Transistors Reveals Bottlenecks to Carrier Transport Ruipeng Li, Ruipeng Li King Abdullah University of Science and Technology, Division of Physical Science and Engineering, Thuwal 23955-6900, Saudi ArabiaSearch for more papers by this authorJeremy W. Ward, Jeremy W. Ward Department of Physics, Wake Forest University, Winston-Salem, North Carolina, 27109, USASearch for more papers by this authorDetlef-M. Smilgies, Detlef-M. Smilgies Cornell High Energy Synchrotron Source, Cornell University, Ithaca, New York, 14850, USASearch for more papers by this authorMarcia M. Payne, Marcia M. Payne Department of Chemistry, University of Kentucky, Lexington, Kentucky, 40506, USASearch for more papers by this authorJohn E. Anthony, John E. Anthony Department of Chemistry, University of Kentucky, Lexington, Kentucky, 40506, USASearch for more papers by this authorOana D. Jurchescu, Oana D. Jurchescu Department of Physics, Wake Forest University, Winston-Salem, North Carolina, 27109, USASearch for more papers by this authorAram Amassian, Corresponding Author Aram Amassian [email protected] King Abdullah University of Science and Technology, Division of Physical Science and Engineering, Thuwal 23955-6900, Saudi ArabiaKing Abdullah University of Science and Technology, Division of Physical Science and Engineering, Thuwal 23955-6900, Saudi Arabia.Search for more papers by this author Ruipeng Li, Ruipeng Li King Abdullah University of Science and Technology, Division of Physical Science and Engineering, Thuwal 23955-6900, Saudi ArabiaSearch for more papers by this authorJeremy W. Ward, Jeremy W. Ward Department of Physics, Wake Forest University, Winston-Salem, North Carolina, 27109, USASearch for more papers by this authorDetlef-M. Smilgies, Detlef-M. Smilgies Cornell High Energy Synchrotron Source, Cornell University, Ithaca, New York, 14850, USASearch for more papers by this authorMarcia M. Payne, Marcia M. Payne Department of Chemistry, University of Kentucky, Lexington, Kentucky, 40506, USASearch for more papers by this authorJohn E. Anthony, John E. Anthony Department of Chemistry, University of Kentucky, Lexington, Kentucky, 40506, USASearch for more papers by this authorOana D. Jurchescu, Oana D. Jurchescu Department of Physics, Wake Forest University, Winston-Salem, North Carolina, 27109, USASearch for more papers by this authorAram Amassian, Corresponding Author Aram Amassian [email protected] King Abdullah University of Science and Technology, Division of Physical Science and Engineering, Thuwal 23955-6900, Saudi ArabiaKing Abdullah University of Science and Technology, Division of Physical Science and Engineering, Thuwal 23955-6900, Saudi Arabia.Search for more papers by this author First published: 10 August 2012 https://doi.org/10.1002/adma.201201856Citations: 67Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Graphical Abstract X-ray microbeam scattering is used to map the microstructure of the organic semiconductor along the channel length of solution-processed bottom-contact OFET devices. Contact-induced nucleation is known to influence the crystallization behavior within the channel. We find that microstructural inhomogeneities in the center of the channel act as a bottleneck to charge transport. This problem can be overcome by controlling crystallization of the preferable texture, thus favoring more efficient charge transport throughout the channel. Supporting Information Detailed facts of importance to specialist readers are published as "Supporting Information". Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Filename Description adma_201201856_sm_suppl.pdf367.1 KB suppl Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. References 1 N. S. Sariciftci, L. Smilowitz, A. J. Heeger, F. Wudl, Science 1992, 258, 1474. 2 H. Sirringhaus, Adv. Mater. 2005, 17, 2411. 3 L. Wang, M.-H. Yoon, G. Lu, Y. yang, A. Facchetti, T. J. Marks, Nat. Mater. 2007, 6, 317. 4 S. K. Park, D. A. Mourey, J. I. Han, J. E. Anthony, T. N. Jackson, Org. Electron. 2009, 10, 486. 5 S. K. Park, T. N. Jackson, J. E. Anthony, D. A. Mourey, Appl. Phys. Lett. 2007, 91. 6 W. H. Lee, J. H. Cho, K. Cho, J. Mater. Chem. 2010, 20. 7 G. Giri, E. Verploegen, S. C. B. Mannsfeld, S. Atahan-Evrenk, D. H. Kim, S. Y. Lee, H. A. Becerril, A. Aspuru-Guzik, M. F. Toney, Z. Bao, Nature 2011, 480, 504. 8 O. D. Jurchescu, D. A. Mourey, S. Subramanian, S. R. Parkin, B. M. Vogel, J. E. Anthony, T. N. Jackson, D. J. Gundlach, Phys Rev B 2009, 80, 085201. 9 K. C. Dickey, J. E. Anthony, Y. L. Loo, Adv. Mater. 2006, 18, 1721. 10 Y. Li, C. Liu, A. Kumatani, P. Darmawan, T. Minari, K. Tsukagoshi, Org. Electron. 2012, 13, 264. 11 J. Rivnay, L. H. Jimison, J. E. Northrup, M. F. Toney, R. Noriega, S. F. Lu, T. J. Marks, A. Facchetti, A. Salleo, Nat. Mater. 2009, 8, 952. 12 S. S. Lee, Y. L. Loo, Annu. Rev. Chem. Biomol. 2010, 1, 59. 13 S. A. Burke, J. M. Topple, P. Grütter, J. Phys.: Condensed Matter 2009, 21, 423101. 14 A. Amassian, V. A. Pozdin, T. V. Desai, S. Hong, A. R. Woll, J. D. Ferguson, J. D. Brock, G. G. Malliaras, J. R. Engstrom, J. Mater. Chem. 2009, 19, 5580. 15 S. K. Park, D. A. Mourey, S. Subramanian, J. E. Anthony, T. N. Jackson, Appl. Phys. Lett. 2008, 93, 043301. 16 D. J. Gundlach, J. E. Royer, S. K. Park, S. Subramanian, O. D. Jurchescu, B. H. Hamadani, A. J. Moad, R. J. Kline, L. C. Teague, O. Kirillov, C. A. Richter, J. G. Kushmerick, L. J. Richter, S. R. Parkin, T. N. Jackson, J. E. Anthony, Nat. Mater. 2008, 7, 216. 17 R. Joseph Kline, M. D. McGehee, M. F. Toney, Nat. Mater. 2006, 5, 222. 18 B. r. Bräuer, A. Virkar, S. C. B. Mannsfeld, D. P. Bernstein, R. Kukreja, K. W. Chou, T. Tyliszczak, Z. Bao, Y. Acremann, Chem. Mater. 2010, 22, 3693. 19 S. Kowarik, K. Broch, A. Hinderhofer, A. Schwartzberg, J. O. Ossó, D. Kilcoyne, F. Schreiber, S. R. Leone, J. Phys. Chem. C 2010, 114, 13061. 20 R. He, I. Dujovne, L. Chen, Q. Miao, C. F. Hirjibehedin, A. Pinczuk, C. Nuckolls, C. Kloc, A. Ron, Appl. Phys. Lett. 2004, 84, 987. 21 I. Stenger, A. Frigout, D. Tondelier, B. Geffroy, R. Ossikovski, Y. Bonnassieux, Appl. Phys. Lett. 2009, 94, 133301. 22 R. Christian, Rep. Progr. Phys. 2000, 63, 233. 23 G. E. Ice, J. D. Budai, J. W. L. Pang, Science 2011, 334, 1234. 24 S. S. Lee, C. S. Kim, E. D. Gomez, B. Purushothaman, M. F. Toney, C. Wang, A. Hexemer, J. E. Anthony, Y.-L. Loo, Adv. Mater. 2009, 21, 3605. 25 O. D. Jurchescu, S. Subramanian, R. J. Kline, S. D. Hudson, J. E. Anthony, T. N. Jackson, D. J. Gundlach, Chem. Mater. 2008, 20, 6733. 26 R. J. Kline, S. D. Hudson, X. Zhang, D. J. Gundlach, A. J. Moad, O. D. Jurchescu, T. N. Jackson, S. Subramanian, J. E. Anthony, M. F. Toney, L. J. Richter, Chem. Mater. 2011, 23, 1194. 27 C. Fredriksson, S. Kihlman, M. Rodahl, B. Kasemo, Langmuir 1998, 14, 248. 28 R. Li, S. Cornaby, M. Kamperman, D.-M. Smilgies, J. Synchrotron Radiat. 2011, 18, 697. 29 S. Fabiano, H. Wang, C. Piliego, C. Jaye, D. A. Fischer, Z. Chen, B. Pignataro, A. Facchetti, Y.-L. Loo, M. A. Loi, Adv. Funct. Mater. 2011, 21, 4479. 30 R. A. Street, J. E. Northrup, A. Salleo, Phys. Rev. B 2005, 71, 165202. Citing Literature Volume24, Issue41November 2, 2012Pages 5553-5558 ReferencesRelatedInformation
Referência(s)