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High-Speed Avalanche Photodiode with a Neutral Absorption Layer for 1.55 µm Wavelength

2004; Institute of Physics; Volume: 43; Issue: No. 3A Linguagem: Inglês

10.1143/jjap.43.l375

1347-4065

Yukihiro Hirota, Seigo Ando, Tadao Ishibashi,

Advanced Photonic Communication Systems

We have developed an InP-based avalanche photodiode (APD) with a p-type neutral absorption layer and refracting-facet (RF) structure. The APD shows a maximum DC response of 0.71 A/W at 1.55 µm wavelength, a low breakdown voltage of 16.9 V, 3 dB down bandwidth of 40 GHz at a gain of 2.3, and a gain-bandwidth product of 140 GHz. This performance demonstrates the superior potential of electron-injection-type APDs compared to hole-injection-type APDs.