Artigo Revisado por pares

Dynamical LACBED analysis of Si/SiGe and Si/SiB multilayer structures

1993; Elsevier BV; Volume: 48; Issue: 1-2 Linguagem: Inglês

10.1016/0304-3991(93)90171-s

ISSN

1879-2723

Autores

C. J. Rossouw, D. D. Perović,

Tópico(s)

Electromagnetic Simulation and Numerical Methods

Resumo

Abstract Contrast in large-angle convergent beam (LACBED) patterns reveals the period P of a Si/SiGe multilayer structure. An increase in resolved strain as the surface normal is tilted away from the incident beam direction leads to better definition of superlattice sidebands. Many-beam dynamical calculations with absorption due to thermal diffuse scattering on an Einstein model display excellent agreement with experiment. A Si/SiB multilayer is also examined. Theory confirms that superlattice peaks are not well defined in LACBEDs from the Si/SiB multilayer since the strain levels in this system are insufficiently large, although some information from the superlattice is contained in rocking curves.

Referência(s)
Altmetric
PlumX