Single-photon emission from a type-B InP∕GaInP quantum dot
2005; American Institute of Physics; Volume: 98; Issue: 9 Linguagem: Inglês
10.1063/1.2130887
ISSN1520-8850
AutoresG. J. Beirne, Peter Michler, Michael Jetter, H. Schweizer,
Tópico(s)Quantum Dots Synthesis And Properties
ResumoType-B InP∕GaInP quantum dots are expected to exhibit a type-II electronic structure. Evidence for this is provided by the variation in decay time of the ensemble as a function of excitation power density. Photon correlation measurements were subsequently performed on a single type-B InP∕GaInP quantum dot using a Hanbury-Brown and Twiss setup [Nature 178, 1447 (1956)]. Autocorrelation measurements were carried out under both continuous-wave and pulsed excitation conditions with single-photon emission observed in each case. The continuous-wave measurements display a pronounced antibunching dip at zero time delay while pulsed measurements enable the triggered generation of single photons on demand at a wavelength of approximately 750 nm.
Referência(s)