Optical properties of digital-alloy In0.49(Ga1−zAlz)0.51P/GaAs and InGaP/In0.49(Ga1−zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy
2005; Elsevier BV; Volume: 284; Issue: 3-4 Linguagem: Inglês
10.1016/j.jcrysgro.2005.07.020
ISSN1873-5002
AutoresJ.M. Kim, C.Y. Park, Y.T. Lee, Jin Dong Song,
Tópico(s)Semiconductor materials and devices
ResumoAbstract Optical properties of digital-alloy InGaAlP and InGaP/InGaAlP multiple-quantum wells (MQWs) grown by molecular beam epitaxy were characterized by 300 and 10 K-photoluminescence (PL). For digital-alloy In 0.49 (Ga 1− z Al z ) 0.51 P grown at 425 °C with z = 0.2 , 0.4, and 0.5, the energies of PL peak were in the range 2.0–2.167 eV. As the growth temperature increased from 425 to 470 °C for the digital-alloy In 0.49 (Ga 0.6 Al 0.4 ) 0.51 P, the intensity of PL peak increased 2.5 times. However, the energy and line width of PL spectrum did not change significantly. The L peak at 2.148 eV and the H peak at 2.189 eV from 8 K-PL were also observed and the intensity ratios of L peak to H peak ( I L / I H ) were 0.046, 0.048, and 0.043 for 425, 450, and 475 °C, respectively. For the digital-alloy InGaP/InGaAlP MQW structure grown at 450 °C, PL peak energy of 1.911 eV and PL line width of 38 meV were obtained successfully. The band gap and compositions of InGaAlP were easily controlled by digital-alloy technique without degrading the crystal quality.
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